APT8065BVRG Microchip Technology
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Technische Details APT8065BVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A, Technology: POWER MOS 5®, Mounting: THT, Case: TO247-3, Kind of package: tube, Drain-source voltage: 800V, Drain current: 13A, On-state resistance: 0.65Ω, Type of transistor: N-MOSFET, Power dissipation: 280W, Polarisation: unipolar, Gate charge: 225nC, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 52A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT8065BVRG
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APT8065BVRG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Technology: POWER MOS 5® Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 800V Drain current: 13A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 52A Anzahl je Verpackung: 1 Stücke |
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APT8065BVRG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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APT8065BVRG | Hersteller : Microchip Technology |
MOSFET FG, MOSFET, 800V, TO-247, RoHS |
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APT8065BVRG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 13A; Idm: 52A Technology: POWER MOS 5® Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 800V Drain current: 13A On-state resistance: 0.65Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 52A |
Produkt ist nicht verfügbar |