APT95GR65B2 Microchip Technology
Hersteller: Microchip Technology
Description: IGBT NPT 650V 208A TMAX
Power - Max: 892 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 208 A
Gate Charge: 420 nC
Test Condition: 433V, 95A, 4.3Ohm, 15V
Switching Energy: 3.12mJ (on), 2.55mJ (off)
Td (on/off) @ 25°C: 29ns/226ns
IGBT Type: NPT
Supplier Device Package: T-MAX™ [B2]
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details APT95GR65B2 Microchip Technology
Description: IGBT NPT 650V 208A TMAX, Power - Max: 892 W, Current - Collector Pulsed (Icm): 400 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 208 A, Gate Charge: 420 nC, Test Condition: 433V, 95A, 4.3Ohm, 15V, Switching Energy: 3.12mJ (on), 2.55mJ (off), Td (on/off) @ 25°C: 29ns/226ns, IGBT Type: NPT, Supplier Device Package: T-MAX™ [B2], Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 95A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT95GR65B2 nach Preis ab 10.63 EUR bis 12.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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|---|---|---|---|---|---|---|---|---|---|
| APT95GR65B2 | Microchip Technology |
IGBTs IGBT MOS 8 650 V 95 A TO-247 MAX |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT95GR65B2 |
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Hersteller: Microchip Technology
IGBTs IGBT MOS 8 650 V 95 A TO-247 MAX
IGBTs IGBT MOS 8 650 V 95 A TO-247 MAX
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.3 EUR |
| 100+ | 10.63 EUR |

