Technische Details APT9M100B Microsemi
Description: MOSFET N-CH 1000V 9A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V.
Weitere Produktangebote APT9M100B
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APT9M100B | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 6A; Idm: 37A; 335W; TO247-3 Case: TO247-3 Kind of package: tube Technology: POWER MOS 8® Polarisation: unipolar Gate charge: 80nC On-state resistance: 1.4Ω Drain current: 6A Pulsed drain current: 37A Gate-source voltage: ±30V Power dissipation: 335W Drain-source voltage: 1kV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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APT9M100B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 9A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 5A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2605 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT9M100B | Hersteller : Microchip Technology |
MOSFET MOSFET MOS8 1000 V 9 A TO-247 |
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APT9M100B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 6A; Idm: 37A; 335W; TO247-3 Case: TO247-3 Kind of package: tube Technology: POWER MOS 8® Polarisation: unipolar Gate charge: 80nC On-state resistance: 1.4Ω Drain current: 6A Pulsed drain current: 37A Gate-source voltage: ±30V Power dissipation: 335W Drain-source voltage: 1kV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |