APTC60AM35T1G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP1
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC60AM35T1G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 54A, On-state resistance: 35mΩ, Power dissipation: 416W, Case: SP1, Technology: CoolMOS™, Gate-source voltage: ±20V, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 200A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60AM35T1G
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Verfügbarkeit |
Preis |
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APTC60AM35T1G | Hersteller : Microchip Technology |
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| APTC60AM35T1G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 600V 72A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP1 |
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| APTC60AM35T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP1 Technology: CoolMOS™ Gate-source voltage: ±20V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |