APTC60AM35T1G MICROCHIP TECHNOLOGY

Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
On-state resistance: 35mΩ
Gate-source voltage: ±20V
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 416W
Drain-source voltage: 600V
Technology: CoolMOS™
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Case: SP1
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC60AM35T1G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, On-state resistance: 35mΩ, Gate-source voltage: ±20V, Drain current: 54A, Pulsed drain current: 200A, Power dissipation: 416W, Drain-source voltage: 600V, Technology: CoolMOS™, Semiconductor structure: transistor/transistor, Topology: MOSFET half-bridge; NTC thermistor, Type of semiconductor module: MOSFET transistor, Case: SP1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC60AM35T1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTC60AM35T1G | Hersteller : Microchip Technology |
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APTC60AM35T1G | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
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APTC60AM35T1G | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP1 |
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APTC60AM35T1G | Hersteller : Microsemi |
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APTC60AM35T1G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw On-state resistance: 35mΩ Gate-source voltage: ±20V Drain current: 54A Pulsed drain current: 200A Power dissipation: 416W Drain-source voltage: 600V Technology: CoolMOS™ Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Case: SP1 |
Produkt ist nicht verfügbar |