Technische Details APTC60HM35T3G Microsemi
Description: MOSFET 4N-CH 600V 72A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 416W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 72A, Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V, Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V, Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V, Vgs(th) (Max) @ Id: 3.9V @ 5.4mA, Supplier Device Package: SP3.
Weitere Produktangebote APTC60HM35T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC60HM35T3G | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APTC60HM35T3G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 72A 32-Pin Case SP-3 Tube |
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APTC60HM35T3G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 600V 72A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 416W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
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| APTC60HM35T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP3F; Press-in PCB; 416W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A Case: SP3F Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 35mΩ Pulsed drain current: 200A Power dissipation: 416W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |