APTC80AM75SCG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Type of module: MOSFET transistor
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
On-state resistance: 75mΩ
Pulsed drain current: 232A
Power dissipation: 568W
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC80AM75SCG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Drain current: 43A, Drain-source voltage: 800V, Semiconductor structure: SiC diode/transistor, Case: SP6C, Type of module: MOSFET transistor, Technology: CoolMOS™; SiC; SJ-MOSFET, Gate-source voltage: ±30V, Topology: MOSFET half-bridge, On-state resistance: 75mΩ, Pulsed drain current: 232A, Power dissipation: 568W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80AM75SCG
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTC80AM75SCG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 800V 56A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 568W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 56A Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V Rds On (Max) @ Id, Vgs: 75mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 4mA Supplier Device Package: SP6 |
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| APTC80AM75SCG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-COOLMOS-SBD-SP6C |
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| APTC80AM75SCG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 43A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP6C Type of module: MOSFET transistor Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge On-state resistance: 75mΩ Pulsed drain current: 232A Power dissipation: 568W |
Produkt ist nicht verfügbar |