APTC80H15T1G Microchip Technology
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Technische Details APTC80H15T1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Drain current: 21A, Drain-source voltage: 800V, Semiconductor structure: transistor/transistor, Case: SP1, Type of module: MOSFET transistor, Technology: CoolMOS™; SJ-MOSFET, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, On-state resistance: 0.15Ω, Pulsed drain current: 110A, Power dissipation: 277W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80H15T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTC80H15T1G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP1 Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
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| APTC80H15T1G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 800V 28A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 277W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Supplier Device Package: SP1 |
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| APTC80H15T1G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP1 |
Produkt ist nicht verfügbar |
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| APTC80H15T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP1 Type of module: MOSFET transistor Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor On-state resistance: 0.15Ω Pulsed drain current: 110A Power dissipation: 277W |
Produkt ist nicht verfügbar |