APTC80H29T3G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
On-state resistance: 0.29Ω
Drain current: 11A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Power dissipation: 156W
Topology: H-bridge; NTC thermistor
Drain-source voltage: 800V
Technology: SJ-MOSFET
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Case: SP3
Anzahl je Verpackung: 1 Stücke
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Technische Details APTC80H29T3G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W, On-state resistance: 0.29Ω, Drain current: 11A, Gate-source voltage: ±30V, Pulsed drain current: 60A, Power dissipation: 156W, Topology: H-bridge; NTC thermistor, Drain-source voltage: 800V, Technology: SJ-MOSFET, Semiconductor structure: transistor/transistor, Electrical mounting: Press-in PCB, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Case: SP3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTC80H29T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTC80H29T3G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 800V 15A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 156W Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
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| APTC80H29T3G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-COOLMOS-SP3 |
Produkt ist nicht verfügbar |
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| APTC80H29T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W On-state resistance: 0.29Ω Drain current: 11A Gate-source voltage: ±30V Pulsed drain current: 60A Power dissipation: 156W Topology: H-bridge; NTC thermistor Drain-source voltage: 800V Technology: SJ-MOSFET Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Case: SP3 |
Produkt ist nicht verfügbar |