APTC90DDA12T1G Microsemi Corporation

Description: MOSFET 2N-CH 900V 30A SP1, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 3.5V @ 3mA, FET Feature: Super Junction, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, Current - Continuous Drain (Id) @ 25°C: 30A, Drain to Source Voltage (Vdss): 900V, Power - Max: 250W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N Channel (Dual Buck Chopper), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Tray.