
APTC90DDA12T1G Microchip Technology
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Technische Details APTC90DDA12T1G Microchip Technology
Description: MOSFET 2N-CH 900V 30A SP1, Packaging: Tray, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Dual Buck Chopper), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250W, Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 30A, Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V, Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V, Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V, FET Feature: Super Junction, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: SP1.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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APTC90DDA12T1G | Hersteller : Microsemi Corporation |
![]() Packaging: Tray Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 2 N Channel (Dual Buck Chopper) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250W Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V FET Feature: Super Junction Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: SP1 |
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