APTCV60HM45BC20T3G Microsemi Power Products Group
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Technische Details APTCV60HM45BC20T3G Microsemi Power Products Group
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W, Case: SP3F, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: CoolMOS™; Field Stop; SiC; Trench, Gate-source voltage: ±20V, Topology: boost chopper; H-bridge; NTC thermistor, Pulsed drain current: 130A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 600V, Drain current: 38A, On-state resistance: 45mΩ, Semiconductor structure: SiC diode/transistor, Power dissipation: 250W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60HM45BC20T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APTCV60HM45BC20T3G | Hersteller : Microchip Technology |
 Power Module 22-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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| APTCV60HM45BC20T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTCV60HM45BC20T3G | Hersteller : Microsemi |
Discrete Semiconductor Modules Power Module - Coolmos |
Produkt ist nicht verfügbar |
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| APTCV60HM45BC20T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W |
Produkt ist nicht verfügbar |