APTCV60HM45BC20T3G Microsemi Power Products Group
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Technische Details APTCV60HM45BC20T3G Microsemi Power Products Group
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: SP3F, Gate-source voltage: ±20V, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, On-state resistance: 45mΩ, Topology: boost chopper; H-bridge; NTC thermistor, Pulsed drain current: 130A, Power dissipation: 250W, Technology: CoolMOS™; Field Stop; SiC; Trench, Drain current: 38A, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60HM45BC20T3G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTCV60HM45BC20T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTCV60HM45BC20T3G | Hersteller : Microsemi | Discrete Semiconductor Modules Power Module - Coolmos |
Produkt ist nicht verfügbar |
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APTCV60HM45BC20T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Mechanical mounting: screw Electrical mounting: Press-in PCB Case: SP3F Gate-source voltage: ±20V Type of module: MOSFET transistor Semiconductor structure: SiC diode/transistor On-state resistance: 45mΩ Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; Field Stop; SiC; Trench Drain current: 38A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |