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APTCV60HM45BC20T3G Microchip Technology


123995-aptcv60hm45bc20t3g-rev2-pdf
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 50A 250W SP3
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Technische Details APTCV60HM45BC20T3G Microchip Technology

Category: Transistor modules, Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 600V, Drain current: 38A, Case: SP3F, Topology: boost chopper; H-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 45mΩ, Pulsed drain current: 130A, Power dissipation: 250W, Technology: CoolMOS™; Field Stop; SiC; Trench, Gate-source voltage: ±20V, Mechanical mounting: screw.

Weitere Produktangebote APTCV60HM45BC20T3G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
APTCV60HM45BC20T3G Microsemi APTCV60HM45BC20T3G-Rev2-600607.pdf Discrete Semiconductor Modules Power Module - Coolmos
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Im Einkaufswagen  Stück im Wert von  UAH
APTCV60HM45BC20T3G MICROCHIP TECHNOLOGY 123995-aptcv60hm45bc20t3g-rev2-pdf Category: Transistor modules
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP3F
Topology: boost chopper; H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APTCV60HM45BC20T3G APTCV60HM45BC20T3G-Rev2-600607.pdf
Hersteller: Microsemi
Discrete Semiconductor Modules Power Module - Coolmos
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTCV60HM45BC20T3G 123995-aptcv60hm45bc20t3g-rev2-pdf
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP3F
Topology: boost chopper; H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH