APTCV60HM45BC20T3G

APTCV60HM45BC20T3G Microsemi Power Products Group


123995-aptcv60hm45bc20t3g-rev2-pdf Hersteller: Microsemi Power Products Group
Description: POWER MOD IGBT3 FULL BRIDGE SP3
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Technische Details APTCV60HM45BC20T3G Microsemi Power Products Group

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: SP3F, Gate-source voltage: ±20V, Type of module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, On-state resistance: 45mΩ, Topology: boost chopper; H-bridge; NTC thermistor, Pulsed drain current: 130A, Power dissipation: 250W, Technology: CoolMOS™; Field Stop; SiC; Trench, Drain current: 38A, Drain-source voltage: 600V, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote APTCV60HM45BC20T3G

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APTCV60HM45BC20T3G Hersteller : MICROCHIP (MICROSEMI) 123995-aptcv60hm45bc20t3g-rev2-pdf Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APTCV60HM45BC20T3G Hersteller : Microsemi APTCV60HM45BC20T3G-Rev2-600607.pdf Discrete Semiconductor Modules Power Module - Coolmos
Produkt ist nicht verfügbar
APTCV60HM45BC20T3G Hersteller : MICROCHIP (MICROSEMI) 123995-aptcv60hm45bc20t3g-rev2-pdf Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: SP3F
Gate-source voltage: ±20V
Type of module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
On-state resistance: 45mΩ
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; Field Stop; SiC; Trench
Drain current: 38A
Drain-source voltage: 600V
Produkt ist nicht verfügbar