APTCV60TLM45T3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Type of module: MOSFET/IGBT transistor
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Case: SP3F
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
Anzahl je Verpackung: 1 Stücke
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Technische Details APTCV60TLM45T3G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A, Type of module: MOSFET/IGBT transistor, On-state resistance: 45mΩ, Power dissipation: 250W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Field Stop; SJ-MOSFET; Trench, Gate-source voltage: ±20V, Topology: NTC thermistor; three-level inverter; single-phase, Pulsed drain current: 130A, Case: SP3F, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 38A, Collector current: 75A, Anzahl je Verpackung: 1 Stücke.
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Description: IGBT MODULE 600V 100A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter - IGBT, FET Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V |
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| APTCV60TLM45T3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Type of module: MOSFET/IGBT transistor On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Case: SP3F Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A |
Produkt ist nicht verfügbar |