APTCV60TLM70T3G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Press-in PCB; Idm: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Collector current: 50A
On-state resistance: 70mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 160A
Type of semiconductor module: MOSFET / IGBT transistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3; Press-in PCB; Idm: 160A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Collector current: 50A
On-state resistance: 70mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 160A
Type of semiconductor module: MOSFET / IGBT transistor
Case: SP3
Anzahl je Verpackung: 1 Stücke
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Technische Details APTCV60TLM70T3G MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 600V; 29A; SP3; Press-in PCB; Idm: 160A, Semiconductor structure: diode/transistor, Drain-source voltage: 600V, Drain current: 29A, Collector current: 50A, On-state resistance: 70mΩ, Power dissipation: 250W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: Field Stop; SJ-MOSFET; Trench, Gate-source voltage: ±20V, Topology: NTC thermistor; three-level inverter; single-phase, Pulsed drain current: 160A, Type of semiconductor module: MOSFET / IGBT transistor, Case: SP3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTCV60TLM70T3G
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APTCV60TLM70T3G | Hersteller : Microchip Technology |
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APTCV60TLM70T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3; Press-in PCB; Idm: 160A Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Collector current: 50A On-state resistance: 70mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 160A Type of semiconductor module: MOSFET / IGBT transistor Case: SP3 |
Produkt ist nicht verfügbar |