Produktrezensionen
Produktbewertung abgeben
Technische Details APTGF50DH60T1G Microsemi
Description: IGBT MODULE 600V 65A 250W SP1, Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 65 A, IGBT Type: NPT, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, Configuration: Asymmetrical Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.
Weitere Produktangebote APTGF50DH60T1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APTGF50DH60T1G | MICROSEMI |
 SP1/POWER MODULE - IGBT APTGF50Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
APTGF50DH60T1G | Microchip Technology |
Description: IGBT MODULE 600V 65A 250W SP1 Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V Current - Collector Cutoff (Max): 250 µA Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 65 A IGBT Type: NPT Supplier Device Package: SP1 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A Configuration: Asymmetrical Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTGF50DH60T1G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 65A 250W SP1
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Description: IGBT MODULE 600V 65A 250W SP1
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: NPT
Supplier Device Package: SP1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
Configuration: Asymmetrical Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP1
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH