Technische Details APTGF50DH60T1G Microsemi
Description: IGBT MODULE 600V 65A 250W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: NPT, Current - Collector (Ic) (Max): 65 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V.
Weitere Produktangebote APTGF50DH60T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGF50DH60T1G | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 600V 65A 250mW 12-Pin Case SP-1 |
Produkt ist nicht verfügbar |
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| APTGF50DH60T1G | Hersteller : MICROSEMI |
SP1/POWER MODULE - IGBT APTGF50 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGF50DH60T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 65A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: NPT Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
Produkt ist nicht verfügbar |