APTGLQ100A65T1G Microchip Technology

Description: IGBT MODULE 650V 200A 350W SP1, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Through Hole, Package / Case: SP1, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V, Current - Collector Cutoff (Max): 100 µA, Power - Max: 350 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 200 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP1, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A.