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APTGLQ100A65T1G MICROCHIP (MICROSEMI)


125284-aptglq100a65t1g-datasheet Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge; NTC thermistor
Technology: Field Stop; Trench
Case: SP1
Application: motors
Collector current: 100A
Pulsed collector current: 270A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 15 Stücke
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Technische Details APTGLQ100A65T1G MICROCHIP (MICROSEMI)

Description: IGBT MODULE 650V 200A 350W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Through Hole, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 350 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V.

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APTGLQ100A65T1G APTGLQ100A65T1G Hersteller : Microchip Technology 125284-aptglq100a65t1g-datasheet Description: IGBT MODULE 650V 200A 350W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Produkt ist nicht verfügbar
APTGLQ100A65T1G Hersteller : Microchip Technology aptglq100a65t1g_rev2-3133432.pdf IGBT Modules CC8101
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APTGLQ100A65T1G Hersteller : MICROCHIP (MICROSEMI) 125284-aptglq100a65t1g-datasheet Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Topology: IGBT half-bridge; NTC thermistor
Technology: Field Stop; Trench
Case: SP1
Application: motors
Collector current: 100A
Pulsed collector current: 270A
Gate-emitter voltage: ±20V
Semiconductor structure: transistor/transistor
Max. off-state voltage: 650V
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar