APTGLQ200HR120G Microchip Technology
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Technische Details APTGLQ200HR120G Microchip Technology
Description: IGBT MODULE 1200V 300A 1000W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Through Hole, Input: Standard, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1000 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V.
Weitere Produktangebote APTGLQ200HR120G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTGLQ200HR120G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: IGBT modulesDescription: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 640A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: 3-level inverter TNPC Case: SP6C Anzahl je Verpackung: 5 Stücke |
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APTGLQ200HR120G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 300A 1000W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1000 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 9.2 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGLQ200HR120G | Hersteller : Microchip Technology |
IGBT Modules DOR CC6214 |
Produkt ist nicht verfügbar |
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| APTGLQ200HR120G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; Urmax: 1.2kV Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 640A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench Topology: 3-level inverter TNPC Case: SP6C |
Produkt ist nicht verfügbar |