APTGT100DH60T3G Microsemi Corporation

Description: IGBT MODULE 600V 150A 340W SP3, Package / Case: SP3, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 340 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 150 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP3, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Asymmetrical Bridge, Input: Standard, Mounting Type: Through Hole.