auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 397.12 EUR |
| 100+ | 295.02 EUR |
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Technische Details APTGT100DU170TG Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual, Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP4, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100DU170TG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APTGT100DU170TG | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 1700V 150A 560000mW 20-Pin Case SP-4 Tube |
Produkt ist nicht verfügbar |
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| APTGT100DU170TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 8 Stücke |
Produkt ist nicht verfügbar |
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APTGT100DU170TG | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100DU170TG | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Topology: IGBT x2; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 100A Case: SP4 Electrical mounting: FASTON connectors; soldering Gate-emitter voltage: ±20V Pulsed collector current: 200A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |