APTGT100H170G Microchip Technology
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Technische Details APTGT100H170G Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100H170G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| APTGT100H170G | Hersteller : MICROSEMI |
 SP6/Full - Bridge Trench + Field Stop IGBT Power Module APTGT100H170Anzahl je Verpackung: 1 Stücke |
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| APTGT100H170G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100H170G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |