APTGT100H170G MICROSEMI
Hersteller: MICROSEMI
SP6/Full - Bridge Trench + Field Stop IGBT Power Module APTGT100H170
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Technische Details APTGT100H170G MICROSEMI
Description: IGBT MODULE 1700V 150A 560W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100H170G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTGT100H170G | Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTGT100H170G | Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APTGT100H170G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 1700V 150A 560W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 560 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT100H170G |
|
Hersteller: Microsemi
IGBT Modules Power Module - IGBT
IGBT Modules Power Module - IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH