APTGT100H170G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 200A
Application: motors
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: H-bridge
Anzahl je Verpackung: 4 Stücke
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Technische Details APTGT100H170G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 150A 560W SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100H170G
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT100H170G | Hersteller : Microchip Technology |
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| APTGT100H170G | Hersteller : MICROSEMI |
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| APTGT100H170G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100H170G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
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| APTGT100H170G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.7kV; SP6C Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 200A Application: motors Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: transistor/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 100A Topology: H-bridge |
Produkt ist nicht verfügbar |