APTGT100H170G MICROSEMI
Hersteller: MICROSEMI
SP6/Full - Bridge Trench + Field Stop IGBT Power Module APTGT100H170
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Technische Details APTGT100H170G MICROSEMI
Description: IGBT MODULE 1700V 150A 560W SP6, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V, Current - Collector Cutoff (Max): 350 µA, Power - Max: 560 W, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector (Ic) (Max): 150 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP6, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Full Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.
Weitere Produktangebote APTGT100H170G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APTGT100H170G | Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Input Capacitance (Cies) @ Vce: 9 nF @ 25 V Current - Collector Cutoff (Max): 350 µA Power - Max: 560 W Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 150 A IGBT Type: Trench Field Stop Supplier Device Package: SP6 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Full Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: SP6 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTGT100H170G | Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APTGT100H170G |
|
Hersteller: Microchip Technology
Description: IGBT MODULE 1700V 150A 560W SP6
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Description: IGBT MODULE 1700V 150A 560W SP6
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: SP6
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Full Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SP6
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTGT100H170G |
|
Hersteller: Microsemi
IGBT Modules Power Module - IGBT
IGBT Modules Power Module - IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH