APTGT100TL170G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw
Application: photovoltaics
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: FASTON connectors; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SP6C
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: three-level inverter; single-phase
Anzahl je Verpackung: 4 Stücke
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Technische Details APTGT100TL170G MICROCHIP (MICROSEMI)
Description: IGBT MODULE 1700V 150A 560W SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SP6, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 9 nF @ 25 V.
Weitere Produktangebote APTGT100TL170G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APTGT100TL170G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1700V 150A 560W SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 560 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT100TL170G | Hersteller : Microsemi |
IGBT Modules Power Module - IGBT |
Produkt ist nicht verfügbar |
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| APTGT100TL170G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 1.7kV; Ic: 100A; SP6C; screw Application: photovoltaics Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.7kV Electrical mounting: FASTON connectors; screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SP6C Gate-emitter voltage: ±20V Collector current: 100A Topology: three-level inverter; single-phase |
Produkt ist nicht verfügbar |