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APTGT200H120G Microchip Technology
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Technische Details APTGT200H120G Microchip Technology
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: SP6C, Application: motors, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Technology: Field Stop; Trench, Mechanical mounting: screw, Anzahl je Verpackung: 4 Stücke.
Weitere Produktangebote APTGT200H120G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT200H120G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 4 Stücke |
Produkt ist nicht verfügbar |
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APTGT200H120G | Hersteller : Microsemi Power Products Group |
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Produkt ist nicht verfügbar |
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APTGT200H120G | Hersteller : Microsemi |
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Produkt ist nicht verfügbar |
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APTGT200H120G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTGT200H120G | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; SP6C Type of module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 200A Case: SP6C Application: motors Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |