APTGT300DU120G MICROCHIP TECHNOLOGY

Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Pulsed collector current: 600A
Technology: Field Stop; Trench
Topology: IGBT x2
Type of semiconductor module: IGBT
Case: SP6C
Max. off-state voltage: 1.2kV
Semiconductor structure: common emitter; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Anzahl je Verpackung: 4 Stücke
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Technische Details APTGT300DU120G MICROCHIP TECHNOLOGY
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Pulsed collector current: 600A, Technology: Field Stop; Trench, Topology: IGBT x2, Type of semiconductor module: IGBT, Case: SP6C, Max. off-state voltage: 1.2kV, Semiconductor structure: common emitter; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Anzahl je Verpackung: 4 Stücke.
Weitere Produktangebote APTGT300DU120G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT300DU120G | Hersteller : Microsemi Power Products Group |
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APTGT300DU120G | Hersteller : Microsemi |
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APTGT300DU120G | Hersteller : Microchip Technology |
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APTGT300DU120G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Pulsed collector current: 600A Technology: Field Stop; Trench Topology: IGBT x2 Type of semiconductor module: IGBT Case: SP6C Max. off-state voltage: 1.2kV Semiconductor structure: common emitter; transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A |
Produkt ist nicht verfügbar |