APTGT50A1202G Microsemi Corporation

Description: IGBT MODULE 1200V 75A 277W SP2, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V, Current - Collector Cutoff (Max): 50 µA, Power - Max: 277 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, IGBT Type: Trench Field Stop, Supplier Device Package: SP2, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SP2, Packaging: Bulk.