auf Bestellung 27 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 162.76 EUR |
| 25+ | 149.19 EUR |
| 100+ | 141.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APTGT50A120T1G Microchip Technology
Description: IGBT MODULE 1200V 75A 277W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 277 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V.
Weitere Produktangebote APTGT50A120T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
APTGT50A120T1G Produktcode: 179164 |
 Verschiedene Bauteile > Verschiedene Bauteile 1 |
Produkt ist nicht verfügbar
|
|||
| APTGT50A120T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Application: motors Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Pulsed collector current: 100A Collector current: 50A Technology: Field Stop; Trench Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Case: SP1 Anzahl je Verpackung: 16 Stücke |
Produkt ist nicht verfügbar |
||
 |
APTGT50A120T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 1200V 75A 277W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 277 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V |
Produkt ist nicht verfügbar |
|
| APTGT50A120T1G | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Application: motors Mechanical mounting: screw Electrical mounting: Press-in PCB Type of module: IGBT Pulsed collector current: 100A Collector current: 50A Technology: Field Stop; Trench Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.2kV Case: SP1 |
Produkt ist nicht verfügbar |