APTGT50DH60T1G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V
Collector current: 50A
Case: SP1
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Topology: asymmetrical bridge; NTC thermistor
Max. off-state voltage: 0.6kV
Semiconductor structure: diode/transistor
Application: motors
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Field Stop; Trench
Anzahl je Verpackung: 19 Stücke
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Technische Details APTGT50DH60T1G MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 80A 176W SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP1, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50DH60T1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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APTGT50DH60T1G | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 600V 80A 176000mW 10-Pin Case SP-1 Tube |
Produkt ist nicht verfügbar |
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| APTGT50DH60T1G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APTGT50DH60T1G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP1 |
Produkt ist nicht verfügbar |
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| APTGT50DH60T1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; asymmetrical bridge; Urmax: 600V Collector current: 50A Case: SP1 Gate-emitter voltage: ±20V Pulsed collector current: 100A Topology: asymmetrical bridge; NTC thermistor Max. off-state voltage: 0.6kV Semiconductor structure: diode/transistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Field Stop; Trench |
Produkt ist nicht verfügbar |