auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 111.55 EUR |
Produktrezensionen
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Technische Details APTGT50X60T3G Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: SP3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 176 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V.
Weitere Produktangebote APTGT50X60T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APTGT50X60T3G | Hersteller : Microchip Technology |
 Trans IGBT Module N-CH 600V 80A 176000mW 32-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
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| APTGT50X60T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 0.6kV Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Technology: Field Stop; Trench Topology: IGBT three-phase bridge; NTC thermistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F Anzahl je Verpackung: 13 Stücke |
Produkt ist nicht verfügbar |
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| APTGT50X60T3G | Hersteller : MICROSEMI |
SP3POWER MODULE - IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTGT50X60T3G | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 80A 176W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 176 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V |
Produkt ist nicht verfügbar |
|
| APTGT50X60T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Max. off-state voltage: 0.6kV Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Technology: Field Stop; Trench Topology: IGBT three-phase bridge; NTC thermistor Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP3F |
Produkt ist nicht verfügbar |