APTGTQ100DDA65T3G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MODULE 650V 100A 250W SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP3F
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
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Technische Details APTGTQ100DDA65T3G Microchip Technology
Description: IGBT MODULE 650V 100A 250W SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Dual Boost Chopper, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: SP3F, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 6 nF @ 25 V.
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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APTGTQ100DDA65T3G | Hersteller : Microchip Technology |
IGBT Modules PM-IGBT-TFS-SP3F |
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| APTGTQ100DDA65T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper x2,NTC thermistor Case: SP3F Max. off-state voltage: 650V Semiconductor structure: diode/transistor Pulsed collector current: 200A Type of semiconductor module: IGBT Technology: Field Stop; Trench Application: motors Electrical mounting: Press-in PCB Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 60A Topology: boost chopper x2; NTC thermistor |
Produkt ist nicht verfügbar |