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APTGX150DU120T3AG Microchip Technology

APTGX150DU120T3AG-IGBT-Module-Datasheet.pdf
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 260A 777W
Input Capacitance (Cies) @ Vce: 30000 pF @ 25 V
Current - Collector Cutoff (Max): 12 µA
Power - Max: 777 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Dual, Common Emitter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details APTGX150DU120T3AG Microchip Technology

Description: IGBT MODULE 1200V 260A 777W, Input Capacitance (Cies) @ Vce: 30000 pF @ 25 V, Current - Collector Cutoff (Max): 12 µA, Power - Max: 777 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 260 A, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Dual, Common Emitter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.