APTM100A13SCG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 1000V 65A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 391.25 EUR |
Produktrezensionen
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Technische Details APTM100A13SCG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1kV, Drain current: 49A, On-state resistance: 156mΩ, Power dissipation: 1.25kW, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Pulsed drain current: 240A, Case: SP6C, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100A13SCG nach Preis ab 418.14 EUR bis 418.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
| APTM100A13SCG | Hersteller : Microchip Technology |
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auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM100A13SCG | Hersteller : Microchip Technology |
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| APTM100A13SCG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Case: SP6C Anzahl je Verpackung: 1 Stücke |
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| APTM100A13SCG | Hersteller : MICROSEMI |
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| APTM100A13SCG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 49A; SP6C; Idm: 240A; 1.25kW Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 49A On-state resistance: 156mΩ Power dissipation: 1.25kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes Pulsed drain current: 240A Case: SP6C |
Produkt ist nicht verfügbar |