APTM100DAM90G Microchip Technology
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Technische Details APTM100DAM90G Microchip Technology
Description: MOSFET N-CH 1000V 78A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V.
Weitere Produktangebote APTM100DAM90G
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM100DAM90G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C Pulsed drain current: 312A Power dissipation: 1.25kW On-state resistance: 0.105Ω Drain current: 59A Drain-source voltage: 1kV Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APTM100DAM90G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 78A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5V @ 10mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V |
Produkt ist nicht verfügbar |
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APTM100DAM90G | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
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APTM100DAM90G | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Semiconductor structure: diode/transistor Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: boost chopper Case: SP6C Pulsed drain current: 312A Power dissipation: 1.25kW On-state resistance: 0.105Ω Drain current: 59A Drain-source voltage: 1kV |
Produkt ist nicht verfügbar |