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APTM100DAM90G Microchip Technology


13098004-aptm100dam90g-rev1-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 78A 5-Pin Case SP-6 Tube
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Technische Details APTM100DAM90G Microchip Technology

Description: MOSFET N-CH 1000V 78A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V.

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APTM100DAM90G Hersteller : MICROCHIP (MICROSEMI) 8004-aptm100dam90g-datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
Anzahl je Verpackung: 1 Stücke
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APTM100DAM90G Hersteller : Microchip Technology 8004-aptm100dam90g-datasheet Description: MOSFET N-CH 1000V 78A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 744 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20700 pF @ 25 V
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APTM100DAM90G Hersteller : Microchip Technology 8004-aptm100dam90g-datasheet Discrete Semiconductor Modules PM-MOSFET-7-SP6C
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APTM100DAM90G Hersteller : MICROCHIP (MICROSEMI) 8004-aptm100dam90g-datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 59A; SP6C; Topology: boost chopper
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper
Case: SP6C
Pulsed drain current: 312A
Power dissipation: 1.25kW
On-state resistance: 0.105Ω
Drain current: 59A
Drain-source voltage: 1kV
Produkt ist nicht verfügbar