APTM100DSK35T3G Microchip Technology
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Technische Details APTM100DSK35T3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 1kV, Drain current: 17A, Case: SP3, Topology: buck chopper x2; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 0.42Ω, Pulsed drain current: 88A, Power dissipation: 390W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100DSK35T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM100DSK35T3G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 17A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.42Ω Pulsed drain current: 88A Power dissipation: 390W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APTM100DSK35T3G | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1000V 22A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP3 |
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| APTM100DSK35T3G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP3 |
Produkt ist nicht verfügbar |
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| APTM100DSK35T3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP3; Press-in PCB; Idm: 88A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 1kV Drain current: 17A Case: SP3 Topology: buck chopper x2; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.42Ω Pulsed drain current: 88A Power dissipation: 390W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |