APTM100DSK35T3G Microchip Technology

Description: MOSFET 2N-CH 1000V 22A SP3, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 22A, Drain to Source Voltage (Vdss): 1000V (1kV), Power - Max: 390W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.