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APTM100H45SCTG

APTM100H45SCTG Microchip Technology


index.php?option=com_docman&task=doc_download&gid=8014 Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+355.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details APTM100H45SCTG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw, Case: SP4, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes; NTC thermistor, Pulsed drain current: 72A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Semiconductor structure: SiC diode/transistor, Power dissipation: 357W, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote APTM100H45SCTG nach Preis ab 275.02 EUR bis 370.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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APTM100H45SCTG Hersteller : Microchip Technology APTM100H45SCTG_Rev4-3444660.pdf Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP4
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+370.22 EUR
100+275.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
APTM100H45SCTG Hersteller : Microchip Technology 13178014-aptm100h45sctg-rev2-pdf.pdf Trans MOSFET N-CH 1KV 18A 20-Pin Case SP-4 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTM100H45SCTG Hersteller : MICROCHIP TECHNOLOGY index.php?option=com_docman&task=doc_download&gid=8014 Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Semiconductor structure: SiC diode/transistor
Power dissipation: 357W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTM100H45SCTG Hersteller : MICROCHIP TECHNOLOGY index.php?option=com_docman&task=doc_download&gid=8014 Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: POWER MOS 7®; SiC
Gate-source voltage: ±30V
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 72A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1kV
Drain current: 14A
On-state resistance: 0.54Ω
Semiconductor structure: SiC diode/transistor
Power dissipation: 357W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH