APTM100H45SCTG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 355.29 EUR |
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Technische Details APTM100H45SCTG Microchip Technology
Description: MOSFET 4N-CH 1000V 18A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 357W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 18A, Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V, Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP4, Part Status: Active.
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