APTM100H45SCTG Microchip Technology

Description: MOSFET 4N-CH 1000V 18A SP4, Part Status: Active, Supplier Device Package: SP4, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V, Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A, Drain to Source Voltage (Vdss): 1000V (1kV), Power - Max: 357W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP4, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V.