APTM100H45SCTG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 4N-CH 1000V 18A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 357W
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 18A
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 355.29 EUR |
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Technische Details APTM100H45SCTG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw, Case: SP4, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Technology: POWER MOS 7®; SiC, Gate-source voltage: ±30V, Topology: H bridge + parrallel diodes; NTC thermistor, Pulsed drain current: 72A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 1kV, Drain current: 14A, On-state resistance: 0.54Ω, Semiconductor structure: SiC diode/transistor, Power dissipation: 357W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM100H45SCTG nach Preis ab 275.02 EUR bis 370.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM100H45SCTG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP4 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTM100H45SCTG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 1KV 18A 20-Pin Case SP-4 Tube |
Produkt ist nicht verfügbar |
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| APTM100H45SCTG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 72A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Semiconductor structure: SiC diode/transistor Power dissipation: 357W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100H45SCTG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 14A; SP4; Idm: 72A; 357W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 72A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1kV Drain current: 14A On-state resistance: 0.54Ω Semiconductor structure: SiC diode/transistor Power dissipation: 357W |
Produkt ist nicht verfügbar |