APTM100SK18TG Microsemi Corporation
Hersteller: Microsemi CorporationDescription: MOSFET N-CH 1000V 43A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 372 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
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Technische Details APTM100SK18TG Microsemi Corporation
Description: MOSFET N-CH 1000V 43A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 372 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.