APTM100TA35SCTPG Microchip Technology

Description: MOSFET 6N-CH 1000V 22A SP6-P, Supplier Device Package: SP6-P, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 22A, Drain to Source Voltage (Vdss): 1000V (1kV), Power - Max: 390W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 6 N-Channel (3-Phase Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.