APTM100TA35SCTPG Microchip Technology
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Technische Details APTM100TA35SCTPG Microchip Technology
Description: MOSFET 6N-CH 1000V 22A SP6-P, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 390W, Drain to Source Voltage (Vdss): 1000V (1kV), Current - Continuous Drain (Id) @ 25°C: 22A, Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V, Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP6-P.
Weitere Produktangebote APTM100TA35SCTPG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM100TA35SCTPG | Hersteller : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Pulsed drain current: 88A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM100TA35SCTPG | Hersteller : Microchip Technology |
Description: MOSFET 6N-CH 1000V 22A SP6-P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390W Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP6-P |
Produkt ist nicht verfügbar |
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| APTM100TA35SCTPG | Hersteller : Microsemi |
Discrete Semiconductor Modules Power Module - Mosfet |
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| APTM100TA35SCTPG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP6P |
Produkt ist nicht verfügbar |
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| APTM100TA35SCTPG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1kV; 17A; SP6P; Press-in PCB; 390W Case: SP6P Semiconductor structure: SiC diode/transistor Drain-source voltage: 1kV Drain current: 17A On-state resistance: 0.42Ω Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7®; SiC Gate-source voltage: ±30V Topology: NTC thermistor Pulsed drain current: 88A |
Produkt ist nicht verfügbar |