APTM100UM65SAG Microchip Technology
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 607.46 EUR |
| 100+ | 451.28 EUR |
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Technische Details APTM100UM65SAG Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V, Power Dissipation (Max): 3250W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V.
Weitere Produktangebote APTM100UM65SAG nach Preis ab 497.11 EUR bis 614.80 EUR
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APTM100UM65SAG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Power Dissipation (Max): 3250W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V |
Produkt ist nicht verfügbar |