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APTM100UM65SCAVG

APTM100UM65SCAVG Microchip Technology


46987262142671912index.phpoptioncom_docmantaskdoc_downloadgid8038itemid1898.phpopt.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 1KV 145A 5-Pin Case SP-6 Tube
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Technische Details APTM100UM65SCAVG Microchip Technology

Description: MOSFET N-CH 1000V 145A SP6, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V, Power Dissipation (Max): 3250W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V.

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APTM100UM65SCAVG Hersteller : MICROCHIP (MICROSEMI) 8038-aptm100um65scavg-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Case: SP6
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Type of module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 3.25kW
On-state resistance: 78mΩ
Drain current: 110A
Drain-source voltage: 1kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Anzahl je Verpackung: 1 Stücke
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APTM100UM65SCAVG Hersteller : Microchip Technology 8038-aptm100um65scavg-datasheet Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Produkt ist nicht verfügbar
APTM100UM65SCAVG Hersteller : Microsemi 8038-aptm100um65scavg-datasheet Discrete Semiconductor Modules Power Module - SiC
Produkt ist nicht verfügbar
APTM100UM65SCAVG Hersteller : MICROCHIP (MICROSEMI) 8038-aptm100um65scavg-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1kV; 110A; SP6; screw; Idm: 580A
Case: SP6
Gate-source voltage: ±30V
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 580A
Type of module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Power dissipation: 3.25kW
On-state resistance: 78mΩ
Drain current: 110A
Drain-source voltage: 1kV
Semiconductor structure: SiC diode/transistor
Technology: POWER MOS 7®; SiC
Produkt ist nicht verfügbar