APTM10HM19FT3G Microchip Technology
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 110.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM10HM19FT3G Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 70A, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V, Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SP3.
Weitere Produktangebote APTM10HM19FT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
APTM10HM19FT3G | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 70A 32-Pin Case SP-3 Tube |
Produkt ist nicht verfügbar |
|
| APTM10HM19FT3G | Hersteller : MICROCHIP TECHNOLOGY |
APTM10HM19FT3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
||
 |
APTM10HM19FT3G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 100V 70A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |