APTM10HM19FT3G Microchip Technology

Description: MOSFET 4N-CH 100V 70A SP3, Supplier Device Package: SP3, Vgs(th) (Max) @ Id: 4V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 70A, Drain to Source Voltage (Vdss): 100V, Power - Max: 208W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP3, Packaging: Bulk.