APTM10HM19FT3G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 130.96 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details APTM10HM19FT3G Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 70A, Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V, Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V, Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SP3.
Weitere Produktangebote APTM10HM19FT3G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
APTM10HM19FT3G | Microchip Technology |
 Description: MOSFET 4N-CH 100V 70A SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SP3 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM10HM19FT3G |
|
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen
Stück im Wert von UAH