Technische Details APTM120DA30CT1G Microchip Technology
Category: Transistor modules, Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 23A, Case: SP1, Topology: boost chopper; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 0.36Ω, Pulsed drain current: 195A, Power dissipation: 657W, Technology: POWER MOS 8®; SiC, Gate-source voltage: ±30V, Mechanical mounting: screw.
Weitere Produktangebote APTM120DA30CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTM120DA30CT1G | Microchip Technology |
 Discrete Semiconductor Modules PM-MOSFET-8-SBD-SP1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTM120DA30CT1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 23A Case: SP1 Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 0.36Ω Pulsed drain current: 195A Power dissipation: 657W Technology: POWER MOS 8®; SiC Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM120DA30CT1G |
|
Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-8-SBD-SP1
Discrete Semiconductor Modules PM-MOSFET-8-SBD-SP1
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM120DA30CT1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 23A
Case: SP1
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 0.36Ω
Pulsed drain current: 195A
Power dissipation: 657W
Technology: POWER MOS 8®; SiC
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen
Stück im Wert von UAH