APTM120DA30CT1G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 23A; SP1; Press-in PCB; 657W, Case: SP1, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: POWER MOS 8®; SiC, Gate-source voltage: ±30V, Topology: boost chopper; NTC thermistor, Pulsed drain current: 195A, Type of semiconductor module: MOSFET transistor, Drain-source voltage: 1.2kV, Drain current: 23A, On-state resistance: 0.36Ω, Semiconductor structure: SiC diode/transistor, Power dissipation: 657W, Anzahl je Verpackung: 1 Stücke.