APTM120H140FT1G Microchip Technology
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Technische Details APTM120H140FT1G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W, On-state resistance: 1.68Ω, Drain current: 6A, Drain-source voltage: 1.2kV, Semiconductor structure: transistor/transistor, Power dissipation: 208W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Case: SP1, Technology: POWER MOS 8®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 50A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM120H140FT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM120H140FT1G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W On-state resistance: 1.68Ω Drain current: 6A Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Power dissipation: 208W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 50A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APTM120H140FT1G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 1200V 8A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 3812pF @ 25V Rds On (Max) @ Id, Vgs: 1.68Ohm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
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| APTM120H140FT1G | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-FREDFET-8-SP1 |
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| APTM120H140FT1G | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 6A; SP1; Press-in PCB; 208W On-state resistance: 1.68Ω Drain current: 6A Drain-source voltage: 1.2kV Semiconductor structure: transistor/transistor Power dissipation: 208W Electrical mounting: Press-in PCB Mechanical mounting: screw Case: SP1 Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 50A Type of semiconductor module: MOSFET transistor |
Produkt ist nicht verfügbar |