APTM120H29FG Microchip Technology

Description: MOSFET 4N-CH 1200V 34A SP6, Supplier Device Package: SP6, Vgs(th) (Max) @ Id: 5V @ 5mA, Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V, Rds On (Max) @ Id, Vgs: 348mOhm @ 17A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 34A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 780W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP6, Packaging: Bulk.