APTM120U10SCAVG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
Power Dissipation (Max): 3290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
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Technische Details APTM120U10SCAVG Microchip Technology
Description: MOSFET N-CH 1200V 116A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V, Power Dissipation (Max): 3290W (Tc), Vgs(th) (Max) @ Id: 5V @ 20mA, Supplier Device Package: SP6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V.
Weitere Produktangebote APTM120U10SCAVG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APTM120U10SCAVG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| APTM120U10SCAVG | MICROCHIP TECHNOLOGY |
Category: Transistor modules Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A Electrical mounting: screw Gate-source voltage: ±30V Semiconductor structure: SiC diode/transistor Case: SP6 On-state resistance: 0.12Ω Topology: single transistor + series diode - parrallel diode Pulsed drain current: 464A Type of semiconductor module: MOSFET transistor Power dissipation: 3.29kW Technology: POWER MOS 7®; SiC Drain current: 86A Drain-source voltage: 1.2kV Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APTM120U10SCAVG |
Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP6
Discrete Semiconductor Modules PM-MOSFET-7-SBD-SP6
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APTM120U10SCAVG |
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: SiC diode/transistor
Case: SP6
On-state resistance: 0.12Ω
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Type of semiconductor module: MOSFET transistor
Power dissipation: 3.29kW
Technology: POWER MOS 7®; SiC
Drain current: 86A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Category: Transistor modules
Description: Module; SiC diode/transistor; 1.2kV; 86A; SP6; screw; Idm: 464A
Electrical mounting: screw
Gate-source voltage: ±30V
Semiconductor structure: SiC diode/transistor
Case: SP6
On-state resistance: 0.12Ω
Topology: single transistor + series diode - parrallel diode
Pulsed drain current: 464A
Type of semiconductor module: MOSFET transistor
Power dissipation: 3.29kW
Technology: POWER MOS 7®; SiC
Drain current: 86A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH