APTM20AM06SG Microchip Technology
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Technische Details APTM20AM06SG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 225A; SP6C; Idm: 1200A; 1.25kW, Topology: MOSFET half-bridge + serial diodes + parrallel diodes, Type of semiconductor module: MOSFET transistor, On-state resistance: 7.2mΩ, Drain current: 225A, Drain-source voltage: 200V, Power dissipation: 1.25kW, Pulsed drain current: 1.2kA, Gate-source voltage: ±30V, Case: SP6C, Electrical mounting: FASTON connectors; screw, Semiconductor structure: diode/transistor, Mechanical mounting: screw, Technology: POWER MOS 7®, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20AM06SG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| APTM20AM06SG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Transistor modules MOSFETDescription: Module; diode/transistor; 200V; 225A; SP6C; Idm: 1200A; 1.25kW Topology: MOSFET half-bridge + serial diodes + parrallel diodes Type of semiconductor module: MOSFET transistor On-state resistance: 7.2mΩ Drain current: 225A Drain-source voltage: 200V Power dissipation: 1.25kW Pulsed drain current: 1.2kA Gate-source voltage: ±30V Case: SP6C Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Mechanical mounting: screw Technology: POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APTM20AM06SG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 200V 300A SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1250W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Supplier Device Package: SP6 Part Status: Active |
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| APTM20AM06SG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP6C |
Produkt ist nicht verfügbar |
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| APTM20AM06SG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 225A; SP6C; Idm: 1200A; 1.25kW Topology: MOSFET half-bridge + serial diodes + parrallel diodes Type of semiconductor module: MOSFET transistor On-state resistance: 7.2mΩ Drain current: 225A Drain-source voltage: 200V Power dissipation: 1.25kW Pulsed drain current: 1.2kA Gate-source voltage: ±30V Case: SP6C Electrical mounting: FASTON connectors; screw Semiconductor structure: diode/transistor Mechanical mounting: screw Technology: POWER MOS 7® |
Produkt ist nicht verfügbar |