APTM20AM06SG

APTM20AM06SG Microchip Technology


11508111-aptm20am06sg-rev2-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 200V 300A 7-Pin Case SP-6 Tube
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details APTM20AM06SG Microchip Technology

Description: MOSFET 2N-CH 200V 300A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 200V, Current - Continuous Drain (Id) @ 25°C: 300A, Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V, Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V, Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 6mA, Supplier Device Package: SP6, Part Status: Active.

Weitere Produktangebote APTM20AM06SG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
APTM20AM06SG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 300A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 300A
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 150A, 10V
Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Supplier Device Package: SP6
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTM20AM06SG Hersteller : Microchip Technology APTM20AM06SG-Rev3.pdf MOSFET Modules PM-MOSFET-7-SP6C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APTM20AM06SG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Semiconductor module; diode/transistor; 200V; 225A; SP6C; 1.25kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 225A
Case: SP6C
Topology: MOSFET half-bridge + serial diodes + parrallel diodes
Electrical mounting: FASTON connectors; screw
On-state resistance: 7.2mΩ
Pulsed drain current: 1.2kA
Power dissipation: 1.25kW
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH