
APTM20AM10STG Microchip Technology
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Technische Details APTM20AM10STG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SP4, On-state resistance: 12mΩ, Power dissipation: 694W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, Pulsed drain current: 700A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 200V, Drain current: 131A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20AM10STG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM20AM10STG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP4 On-state resistance: 12mΩ Power dissipation: 694W Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 700A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 131A Anzahl je Verpackung: 1 Stücke |
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APTM20AM10STG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 694W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP4 |
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APTM20AM10STG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM20AM10STG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Case: SP4 On-state resistance: 12mΩ Power dissipation: 694W Technology: POWER MOS 7® Gate-source voltage: ±30V Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor Pulsed drain current: 700A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 131A |
Produkt ist nicht verfügbar |