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APTM20AM10STG

APTM20AM10STG Microchip Technology


aptm20am10stg-rev3.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 200V 175A 20-Pin Case SP-4 Tube
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Technische Details APTM20AM10STG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Case: SP4, On-state resistance: 12mΩ, Power dissipation: 694W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor, Pulsed drain current: 700A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 200V, Drain current: 131A, Anzahl je Verpackung: 1 Stücke.

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APTM20AM10STG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP4
On-state resistance: 12mΩ
Power dissipation: 694W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 131A
Anzahl je Verpackung: 1 Stücke
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APTM20AM10STG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 200V 175A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 694W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
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APTM20AM10STG Hersteller : Microchip Technology APTM20AM10STG_Rev3-3445004.pdf MOSFET Modules PM-MOSFET-7-SP4
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APTM20AM10STG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 131A; SP4; Idm: 700A; 694W; Ugs: ±30V
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Case: SP4
On-state resistance: 12mΩ
Power dissipation: 694W
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: MOSFET half-bridge + serial diodes + parrallel diodes; NTC thermistor
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Drain current: 131A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH