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APTM20DAM08TG

APTM20DAM08TG Microchip Technology


11568117-aptm20dam08tg-rev4-pdf.pdf Hersteller: Microchip Technology
Trans MOSFET N-CH 200V 208A 20-Pin Case SP-4 Tube
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Technische Details APTM20DAM08TG Microchip Technology

Description: MOSFET N-CH 200V 208A SP4, Packaging: Bulk, Package / Case: SP4, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 208A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V, Power Dissipation (Max): 781W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: SP4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V.

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APTM20DAM08TG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Drain current: 155A
On-state resistance: 10mΩ
Power dissipation: 781W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 832A
Case: SP4
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Anzahl je Verpackung: 1 Stücke
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APTM20DAM08TG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 200V 208A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 208A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V
Power Dissipation (Max): 781W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SP4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
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APTM20DAM08TG Hersteller : Microchip Technology APTM20DAM08TG_Rev5-3444743.pdf MOSFET Modules PM-MOSFET-7-SP4
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APTM20DAM08TG Hersteller : MICROCHIP TECHNOLOGY High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; diode/transistor; 200V; 155A; SP4; Idm: 832A; 781W; Ugs: ±30V
Drain current: 155A
On-state resistance: 10mΩ
Power dissipation: 781W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 832A
Case: SP4
Semiconductor structure: diode/transistor
Drain-source voltage: 200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH