APTM20HM08FG Microchip Technology
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Technische Details APTM20HM08FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W, Drain current: 155A, On-state resistance: 10mΩ, Power dissipation: 781W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 7®, Gate-source voltage: ±30V, Topology: H-bridge, Pulsed drain current: 832A, Case: SP6C, Semiconductor structure: transistor/transistor, Drain-source voltage: 200V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTM20HM08FG
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM20HM08FG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Drain current: 155A On-state resistance: 10mΩ Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 832A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V Anzahl je Verpackung: 1 Stücke |
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APTM20HM08FG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
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APTM20HM08FG | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 781W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Rds On (Max) @ Id, Vgs: 10mOhm @ 104A, 10V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: SP6 |
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APTM20HM08FG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APTM20HM08FG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Module; transistor/transistor; 200V; 155A; SP6C; Idm: 832A; 781W Drain current: 155A On-state resistance: 10mΩ Power dissipation: 781W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Gate-source voltage: ±30V Topology: H-bridge Pulsed drain current: 832A Case: SP6C Semiconductor structure: transistor/transistor Drain-source voltage: 200V |
Produkt ist nicht verfügbar |