APTM20HM20STG Microchip Technology
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Technische Details APTM20HM20STG Microchip Technology
Category: Transistor modules MOSFET, Description: Semiconductor module; diode/transistor; 200V; 66A; SP4; Idm: 356A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: diode/transistor, Drain-source voltage: 200V, Drain current: 66A, Case: SP4, Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor, Electrical mounting: FASTON connectors; screw, On-state resistance: 24mΩ, Pulsed drain current: 356A, Power dissipation: 357W, Technology: POWER MOS 7®, Gate-source voltage: ±30V, Mechanical mounting: screw.
Weitere Produktangebote APTM20HM20STG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APTM20HM20STG | Hersteller : Microchip Technology |
 Description: MOSFET 4N-CH 200V 89A SP4Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 357W Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 89A Input Capacitance (Ciss) (Max) @ Vds: 6850pF @ 25V Rds On (Max) @ Id, Vgs: 24mOhm @ 44.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 |
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| APTM20HM20STG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-7-SP4 |
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| APTM20HM20STG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Semiconductor module; diode/transistor; 200V; 66A; SP4; Idm: 356A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 66A Case: SP4 Topology: H bridge + parrallel diodes + sereies diodes; NTC thermistor Electrical mounting: FASTON connectors; screw On-state resistance: 24mΩ Pulsed drain current: 356A Power dissipation: 357W Technology: POWER MOS 7® Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |