APTM50AM17FG MICROCHIP TECHNOLOGY


High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Hersteller: MICROCHIP TECHNOLOGY
APTM50AM17FG Transistor modules MOSFET
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Technische Details APTM50AM17FG MICROCHIP TECHNOLOGY

Description: MOSFET 2N-CH 500V 180A SP6, Packaging: Bulk, Package / Case: SP6, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1250W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 180A, Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V, Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: SP6.

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APTM50AM17FG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 2N-CH 500V 180A SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1250W
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 180A
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: SP6
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APTM50AM17FG Hersteller : Microsemi APTM50AM17FG-Rev3-602171.pdf Discrete Semiconductor Modules Power Module - Mosfet
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