APTM50DSK10T3G Microchip Technology
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Technische Details APTM50DSK10T3G Microchip Technology
Description: MOSFET 2N-CH 500V 37A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 312W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 37A, Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V, Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP3.
Weitere Produktangebote APTM50DSK10T3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
| APTM50DSK10T3G | Hersteller : Microsemi Corporation |
 Description: MOSFET 2N-CH 500V 37A SP3Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 37A Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP3 |
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