APTM50H15FT1G Microchip Technology
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 93.74 EUR |
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Technische Details APTM50H15FT1G Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 25A, Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V, Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP1.
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APTM50H15FT1G | Hersteller : Microchip / Microsemi |
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auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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APTM50H15FT1G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 500V 25A 12-Pin Case SP-1 Tube |
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| APTM50H15FT1G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 500V 25A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP1 |
Produkt ist nicht verfügbar |