Technische Details APTM50H15FT1G Microchip Technology
Description: MOSFET 4N-CH 500V 25A SP1, Supplier Device Package: SP1, Vgs(th) (Max) @ Id: 5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V, Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 25A, Drain to Source Voltage (Vdss): 500V, Power - Max: 208W, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: SP1, Packaging: Bulk.
Weitere Produktangebote APTM50H15FT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APTM50H15FT1G | Hersteller : Microchip / Microsemi |
 Discrete Semiconductor Modules DOR CC8031 |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| APTM50H15FT1G | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 500V 25A SP1 Supplier Device Package: SP1 Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Rds On (Max) @ Id, Vgs: 180mOhm @ 21A, 10V Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V Current - Continuous Drain (Id) @ 25°C: 25A Drain to Source Voltage (Vdss): 500V Power - Max: 208W Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: SP1 Packaging: Bulk |
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