APTMC120AM12CT3AG MICROCHIP TECHNOLOGY

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 165A; SP3F; Press-in PCB, Power dissipation: 925W, Case: SP3F, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 165A, On-state resistance: 12mΩ, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Technology: SiC, Topology: MOSFET half-bridge; NTC thermistor, Pulsed drain current: 440A, Type of semiconductor module: MOSFET transistor, Anzahl je Verpackung: 1 Stücke.