APTMC120HR11CT3AG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
On-state resistance: 98mΩ
Drain current: 20A
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Technology: Field Stop; SiC; Trench
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Power dissipation: 125W
Case: SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
On-state resistance: 98mΩ
Drain current: 20A
Pulsed drain current: 55A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Technology: Field Stop; SiC; Trench
Anzahl je Verpackung: 1 Stücke
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Technische Details APTMC120HR11CT3AG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F, Power dissipation: 125W, Case: SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, On-state resistance: 98mΩ, Drain current: 20A, Pulsed drain current: 55A, Drain-source voltage: 1.2kV, Electrical mounting: Press-in PCB, Technology: Field Stop; SiC; Trench, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APTMC120HR11CT3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APTMC120HR11CT3AG | Hersteller : Microsemi | Discrete Semiconductor Modules Power Module - SiC |
Produkt ist nicht verfügbar |
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| APTMC120HR11CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F Power dissipation: 125W Case: SP3F Semiconductor structure: common emitter; SiC diode/transistor Topology: IGBT x2; MOSFET half-bridge; NTC thermistor Type of semiconductor module: MOSFET transistor Mechanical mounting: screw On-state resistance: 98mΩ Drain current: 20A Pulsed drain current: 55A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Technology: Field Stop; SiC; Trench |
Produkt ist nicht verfügbar |