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APTMC120HR11CT3AG Microsemi


Hersteller: Microsemi
Discrete Semiconductor Modules Power Module - SiC
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Technische Details APTMC120HR11CT3AG Microsemi

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F, Semiconductor structure: common emitter; SiC diode/transistor, Case: SP3F, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, On-state resistance: 98mΩ, Drain current: 20A, Pulsed drain current: 55A, Power dissipation: 125W, Drain-source voltage: 1.2kV, Electrical mounting: Press-in PCB, Technology: Field Stop; SiC; Trench, Topology: IGBT x2; MOSFET half-bridge; NTC thermistor.

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APTMC120HR11CT3AG Hersteller : MICROCHIP TECHNOLOGY Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor,common emitter; 1.2kV; 20A; SP3F
Semiconductor structure: common emitter; SiC diode/transistor
Case: SP3F
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
On-state resistance: 98mΩ
Drain current: 20A
Pulsed drain current: 55A
Power dissipation: 125W
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Technology: Field Stop; SiC; Trench
Topology: IGBT x2; MOSFET half-bridge; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH